SML1310IGF v gs gate ? source voltage i d continuous drain current (v gs = 0 , t case = 25c) i d continuous drain current (v gs = 0 , t case = 100c) i dm pulsed drain current 1 p d power dissipation @ t case = 25c linear derating factor t j , t stg operating and storage temperature range t l package mounting surface temperature (for 5 sec) r jc thermal resistance junction to case 20v 18a 18a 72a 100w 0.8w/c ?55 to 150c 300c 1.25c/w max. mechanical data dimensions in mm (inches) absolute maximum ratings (t case = 25 c unless otherwise stated) to257 flexilead ? metal package notes 1) pulse test: pulse width 300ms, ? 2% n?channel power mosfet for hi?rel applications features hermetically sealed to257 metal package simple drive requirements lightweight screening options available all leads isolated from case pin 1 ? gate pin 2 ? drain pin 3 ? source v ds 100v i d(max) 18a r ds(on) .044 ? ? semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 6027 issue 1 1 2 3 4.50 4.81 10.40 10.80 0.75 0.95 3.50 3.70 dia. 2.54 bsc 2.65 2.96 0.75 0.85 16.30 16.70 20 min. 10.50 10.67 3.0 1.0 dia. 3 places 2.1 max.
parameter test conditions min. typ. max. unit source ? drain diode characteristics SML1310IGF v gs = 0 i d = 250 a v ds = v gs i d = 250 a v gs 20v v gs = -20v v ds = 100v,v gs =0v v ds = 80v, v gs =0v t c = 125 c v gs = 10v i d = 18a v ds = 25v i d = 18a v gs = 0v v ds = 25v f = 1mhz v dd = 50v i d = 18a rg = 3.6 ? v gs =10v modified mospower smbol showing the integral p-n junction rectifier i s = 18a ,v gs = 0v, t c = 25 c t j = 25 ci f =18a di / dt = 100a/ s electrical characteristics (t amb = 25 c unless otherwise stated) v na a ? s pf ns a v ns c drain ? source breakdown voltage gate threshold voltage gate-body leakage forward gate-body leakage reverse zero gate voltage drain current static drain ? source on ? state resistance1 forward transductance 1 input capacitance output capacitance reverse transfer capacitance turn ? on delay time rise time turn ? off delay time fall time continuous source current (body diode) source current1 (body diode) diode forward voltage reverse recovery time reverse recovery charge 100 2.0 4.0 100 -100 25 250 0.44 14 1872 463 234 19 85 65 54 18 72 1.3 270 1.8 bv dss v gs(th) i gss i gss i dss r ds(on) g fs c iss c oss c rss t d(on) t r t d(off) t f i s i sm v sd t rr qrr static electrical ratings notes 1) pulse test: pulse width 300ms, ? 2% dynamic characteristics semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 6027 issue 1
|
